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Design and fabrication of the gallium nitride power HEMT and schottky barrier diode : Gallium nitride 電力 헴트 및 쇼키 다이오드의 設計 및 製作
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- Authors
- Advisor
- 한민구
- Issue Date
- 2006
- Publisher
- 서울대학교 대학원
- Keywords
- high electron mobility transistor (HEMT) ; high electron mobility transistor (HEMT) ; 쇼키 다이오드 ; Schottky barreri diode (SBD) ; 엑시머 레어저 조사 ; excimer laser irradiation ; 도핑 방법 ; doping method ; floating 쇼키 접합 ; floating metal ring ; 산화 공정 ; edge termination ; floating gate ; oxidation
- Description
- Thesis(doctoral)--서울대학교 대학원 :전기·컴퓨터공학부,2006.
- Language
- English
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