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Correlation of memory characteristics of polymer bistable memory devices with metal deposition process

DC Field Value Language
dc.contributor.authorKim, Sung Hyun-
dc.contributor.authorYook, Kyoung Soo-
dc.contributor.authorJang, Jyongsik-
dc.contributor.authorLee, Jun Yeob-
dc.date.accessioned2010-02-03-
dc.date.available2010-02-03-
dc.date.issued2008-07-18-
dc.identifier.citationSynthetic Metals 158 (2008) 861–864en
dc.identifier.issn0379-6779-
dc.identifier.urihttps://hdl.handle.net/10371/48987-
dc.description.abstractOrigin of bistability in organic bistable memory devices (OBDs) was investigated by using two metal
deposition processes of electron beam deposition and thermal deposition. Thermal deposition of Al was
more effective than electron beam deposition to get high on/off ratio and stable operation of OBDs and
metal nanoparticle formation during metal deposition was found to be critical to bistability of polymer
OBDs.
en
dc.language.isoenen
dc.publisherElsevieren
dc.subjectBistabilityen
dc.subjectOrganic memoryen
dc.subjectMetal deposition processen
dc.titleCorrelation of memory characteristics of polymer bistable memory devices with metal deposition processen
dc.typeArticleen
dc.contributor.AlternativeAuthor김성현-
dc.contributor.AlternativeAuthor육경수-
dc.contributor.AlternativeAuthor장정식-
dc.contributor.AlternativeAuthor이준엽-
dc.identifier.doi10.1016/j.synthmet.2008.06.004-
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