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Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN

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Authors
Park, Won Il; Yi, Gyu-Chul
Issue Date
2004-01-05
Publisher
John Wiley & Sons
Citation
Adv. Mater. 2004, 16, 87
Keywords
OPTOELECTRONIC DEVICESROOM-TEMPERATUREBANDPHOTOLUMINESCENCEEMISSIONS
Abstract
Electrolurninescent (EL) devices (see Figure) have been fabricated using n-ZnO nanorod arrays grown on p-GaN epilayers. Simple heteroepitaxial growth yields vertically aligned ZnO nanorods with an abrupt interface on GaN. The p-n heterojunction EL device shows a high current density and strong electroluminescence even at a reverse-bias voltage of 3 V.
ISSN
0935-9648 (print)
1521-4095 (online)
Language
English
URI
http://hdl.handle.net/10371/4900
DOI
https://doi.org/10.1002/adma.200305729

https://doi.org/10.1002/adma.200305729
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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