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Ferromagnetic properties of Zn1-xMgxO epitaxial films

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Authors
Jung, S. W.; An, S.-J.; Yi, Gyu-Chul; Jung, C. U.; Lee, Sung-Ik; Cho, Sunglae
Issue Date
2002-06-17
Publisher
American Institute of Physics
Citation
Appl. Phys. Lett. 80, 4561 (2002)
Keywords
MAGNETIC SEMICONDUCTORS; DOPED ZNO
Abstract
We report on ferromagnetic characteristics of Zn1-xMnxO (x=0.1 and 0.3) thin films grown on Al2O3(00.1) substrates using laser molecular-beam epitaxy. By increasing the Mn content, the films exhibited increases in both the c-axis lattice constant and fundamental band gap energy. The Curie temperature obtained from temperature-dependent magnetization curves was 45 K for the film with x=0.3, depending on the Mn composition in the films. The remanent magnetization and coercive field of Zn0.9Mn0.1O at 5 K were 0.9 emu/g and 300 Oe, respectively. For Zn0.7Mn0.3O, the remanent magnetization at 5 K increased to 3.4 emu/g. (C) 2002 American Institute of Physics.
ISSN
0003-6951 (print)1077-3118 (online)
Language
English
URI
http://hdl.handle.net/10371/4905
http://link.aip.org/link/?APPLAB/80/4561/1
DOI
https://doi.org/10.1063/1.1487927
https://doi.org/10.1063/1.1487927
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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