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Low-resistance Ti/Al ohmic contact on undoped ZnO
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Soo Young | - |
dc.contributor.author | Jang, Ho Won | - |
dc.contributor.author | Kim, Jong Kyu | - |
dc.contributor.author | Jeon, Chang Min | - |
dc.contributor.author | Park, Won Il | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.contributor.author | Lee, Jong-Lam | - |
dc.date.accessioned | 2009-06-23T09:20:31Z | - |
dc.date.available | 2009-06-23T09:20:31Z | - |
dc.date.issued | 2002-05 | - |
dc.identifier.citation | Journal of Electronic Materials, 31, 868(2002) | en |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | https://hdl.handle.net/10371/4906 | - |
dc.description.abstract | We report a low-resistance ohmic contact on undoped ZnO using a promising contact scheme of Ti/Al. Specific-contact resistivity, as low as 9.0 x 10(-7) Omegacm(2), was obtained from the Ti(300 Angstrom)/Al(3,000 Angstrom) contact annealed at 300degreesC. It was found that TiO was produced, and the atomic ratio of Zn/O was dramatically increased after annealing at 300degreesC. This provides the evidence that a number of oxygen vacancies, acting as donors for electrons, were produced below the contact. This leads to the increase of electron concentration via the reduction of contact resistivity. | en |
dc.language.iso | en | en |
dc.publisher | Springer Verlag | en |
dc.publisher | The Minerals, Metals & Materials Society (TMS) | - |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | - |
dc.subject | ZnO | en |
dc.subject | ohmic contact | en |
dc.subject | photoemission spectroscopy | en |
dc.title | Low-resistance Ti/Al ohmic contact on undoped ZnO | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 이규철 | - |
dc.contributor.AlternativeAuthor | 박원일 | - |
dc.contributor.AlternativeAuthor | 김수영 | - |
dc.contributor.AlternativeAuthor | 장호원 | - |
dc.contributor.AlternativeAuthor | 김종규 | - |
dc.contributor.AlternativeAuthor | 전창민 | - |
dc.identifier.doi | 10.1007/s11664-002-0197-1 | - |
dc.identifier.doi | 10.1007/s11664-002-0197-1 | - |
dc.citation.journaltitle | Journal of Electronic Materials | - |
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