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Organic light emitting bistable memory device with high on/off ratio and low driving voltage

Cited 17 time in Web of Science Cited 23 time in Scopus
Authors
Kim, Sung Hyun; Yook, Kyoung Soo; Lee, Jun Yeob; Jang, Jyongsik
Issue Date
2008-08-08
Publisher
American Institute of Physics
Citation
Appl. Phys. Lett. 93, 053306
Abstract
Organic light emitting bistable memory devices (OLEBDs) with a dual function of organic light
emitting diodes and organic memory devices were developed by using 0.5 nm thick MoO3 as an
interlayer between hole injection layer and hole transport layer. The hole transport unit with MoO3
interlayer played a role of a memory unit as well as a hole transport unit. High on/off ratio over 1000
was obtained at a reading voltage of 1 V and driving voltage was lowered by MoO3. In addition, two
different luminances were obtained at the same driving voltage by changing writing voltage of
OLEBDs.
ISSN
0003-6951
Language
English
URI
http://hdl.handle.net/10371/49075
DOI
https://doi.org/10.1063/1.2964178
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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