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Organic light emitting bistable memory device with high on/off ratio and low driving voltage
Cited 18 time in
Web of Science
Cited 24 time in Scopus
- Authors
- Issue Date
- 2008-08-08
- Publisher
- American Institute of Physics
- Citation
- Appl. Phys. Lett. 93, 053306
- Abstract
- Organic light emitting bistable memory devices (OLEBDs) with a dual function of organic light
emitting diodes and organic memory devices were developed by using 0.5 nm thick MoO3 as an
interlayer between hole injection layer and hole transport layer. The hole transport unit with MoO3
interlayer played a role of a memory unit as well as a hole transport unit. High on/off ratio over 1000
was obtained at a reading voltage of 1 V and driving voltage was lowered by MoO3. In addition, two
different luminances were obtained at the same driving voltage by changing writing voltage of
OLEBDs.
- ISSN
- 0003-6951
- Language
- English
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