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초고속 Digital IC를 위한 HEMT Yield 개선에 관한 연구 : (A)Study on the improvement of HEMT Yield for high speed digital IC
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- Authors
- Advisor
- 서광석
- Issue Date
- 2005
- Publisher
- 서울대학교 대학원
- Keywords
- Gate Recess ; Ultrasonic Bath ; Yield ; InGaAs HEMT
- Description
- 학위논문(석사)--서울대학교 대학원 :전기.컴퓨터공학부,2005.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000051412
https://hdl.handle.net/10371/50035
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