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유기실리콘 화합물원료를 이용한 단결정 탄화규소 박막성장 및 특성 연구 : Growth and characterization of heteroepitaxial β-SiC thin films using organosilicon precursor

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Authors

방욱

Advisor
김형준
Issue Date
1997
Publisher
서울대학교 대학원
Keywords
Silicon carbide(SiC)탄화규소thin film박막single crystalline단결정buffer layer버퍼층chemical vapor deposition(CVD)화학기상증착법
Description
학위논문(박사)--서울대학교 대학원 :무기재료공학과,1997.
Language
Korean
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000079075

https://hdl.handle.net/10371/50788
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