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저압 화학 증착법에 의한 텅스텐 박막의 특성 및 응용에 관한 연구 : The Formation of LPCVD-W thin films on SiO₂ for gate electrode application
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 김형준 | - |
| dc.contributor.author | 손재현 | - |
| dc.date.accessioned | 2010-02-05T06:41:34Z | - |
| dc.date.available | 2010-02-05T06:41:34Z | - |
| dc.date.copyright | 1995. | - |
| dc.date.issued | 1995 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000084615 | kog |
| dc.identifier.uri | https://hdl.handle.net/10371/50818 | - |
| dc.description | 학위논문(박사)--서울대학교 대학원 :무기재료공학과,1995. | ko |
| dc.format.extent | xiii, 153 장 | ko |
| dc.language.iso | ko | ko |
| dc.publisher | 서울대학교 대학원 | ko |
| dc.subject | 저압화학증착법 | ko |
| dc.subject | LPCVD | ko |
| dc.subject | 텅스텐 박막 | ko |
| dc.subject | Tungsten Thin Film | ko |
| dc.subject | 실리콘산화막 | ko |
| dc.subject | Silicon Dioxide | ko |
| dc.subject | 실리콘질화막 | ko |
| dc.subject | Silicon Nitride | ko |
| dc.subject | 게이트 전극재료 | ko |
| dc.subject | MOS Capacitor | ko |
| dc.title | 저압 화학 증착법에 의한 텅스텐 박막의 특성 및 응용에 관한 연구 | ko |
| dc.title.alternative | The Formation of LPCVD-W thin films on SiO₂ for gate electrode application | ko |
| dc.type | Thesis | - |
| dc.contributor.department | 무기재료공학과 | - |
| dc.description.degree | Doctor | ko |
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