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저압 화학 증착법에 의한 텅스텐 박막의 특성 및 응용에 관한 연구
The Formation of LPCVD-W thin films on SiO₂ for gate electrode application

DC Field Value Language
dc.contributor.advisor김형준-
dc.contributor.author손재현-
dc.date.accessioned2010-02-05T06:41:34Z-
dc.date.available2010-02-05T06:41:34Z-
dc.date.copyright1995.-
dc.date.issued1995-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000084615kog
dc.identifier.urihttp://hdl.handle.net/10371/50818-
dc.description학위논문(박사)--서울대학교 대학원 :무기재료공학과,1995.ko
dc.format.extentxiii, 153 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subject저압화학증착법ko
dc.subjectLPCVDko
dc.subject텅스텐 박막ko
dc.subjectTungsten Thin Filmko
dc.subject실리콘산화막ko
dc.subjectSilicon Dioxideko
dc.subject실리콘질화막ko
dc.subjectSilicon Nitrideko
dc.subject게이트 전극재료ko
dc.subjectMOS Capacitorko
dc.title저압 화학 증착법에 의한 텅스텐 박막의 특성 및 응용에 관한 연구ko
dc.title.alternativeThe Formation of LPCVD-W thin films on SiO₂ for gate electrode applicationko
dc.typeThesis-
dc.contributor.department무기재료공학과-
dc.description.degreeDoctorko
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Theses (Ph.D. / Sc.D._재료공학부)
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