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BCH error correction circuits for multi-level cell NAND flash memories

DC Field Value Language
dc.contributor.advisor성원용-
dc.contributor.author유미-
dc.date.accessioned2010-02-09T01:01:14Z-
dc.date.available2010-02-09T01:01:14Z-
dc.date.copyright2006.-
dc.date.issued2006-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000049365kog
dc.identifier.urihttps://hdl.handle.net/10371/52565-
dc.descriptionThesis(master`s) --서울대학교 대학원 :전기. 컴퓨터공학부,2006.ko
dc.format.extentv, 57 leavesko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subjectBCHko
dc.subjectBCHko
dc.subjectlow-powerko
dc.subjectlow-powerko
dc.subjectparallelko
dc.subjectparallelko
dc.subjectmulti-level cell flash memoriesko
dc.subjectmulti-level cell flash memoriesko
dc.subjecterror correction codeko
dc.subjecterror correction codeko
dc.titleBCH error correction circuits for multi-level cell NAND flash memoriesko
dc.typeThesis-
dc.contributor.department전기. 컴퓨터공학부-
dc.description.degreeMasterko
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