SHERP

Metal-organic vapor phase epitaxial growth of high-quality ZnO on Al2O3(00.1)

Cited 0 time in webofscience Cited 0 time in scopus
Authors
Park, W.I.; An, S-J.; Yi, Gyu-Chul; Jang, Hyun M.
Issue Date
2001-05-01
Publisher
Materials Research Society
Citation
J. Mater. Res., 16, 1358 (2001)
Abstract
High-quality ZnO thin films were grown epitaxially at 250-550 degreesC Al2O3(00.1) substrates using low-pressure metalorganic vapor phase epitaxy. The reactants for the growth were diethylzinc and oxygen. Growth temperature, one of the important experimental parameters for epitaxial layers, was optimized. The films grown at 500 degreesC exhibited good crystallinity and strong ultraviolet absorption and emission. Photoluminescence spectra of the films showed a dominant excitonic emission with a weak deep level emission. More importantly, a strong stimulated emission peak was observed even at room temperature.
ISSN
0884-2914
Language
English
URI
http://www.mrs.org
http://hdl.handle.net/10371/5353
DOI
https://doi.org/10.1557/JMR.2001.0190
https://doi.org/10.1557/JMR.2001.0190
Files in This Item:
Appears in Collections:
College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse