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Photoluminescent Properties of Se-doped GaN

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Authors
Yi, Gyu-Chul; Park, Won Il
Issue Date
2001-07-15
Publisher
Japan Society of Applied Physics
Citation
Jpn. J. Appl. Phys. 40 (2001) 4470
Keywords
Se-doped GaN; photoluminescence spectroscopy; metal-organic vapor phase epitaxy
Abstract
The nature of Se donors in GaN was investigated using temperature dependent photoluminescence spectroscopy. Near-bandedge emission of the doped films was investigated at temperatures between 15-300 K. Based on the temperature dependence of the near-bandedge emission, the Se donor level in GaN was estimated to be 38 +/- 4 meV below the conduction band minimum.
ISSN
0021-4922 (print)1347-4065 (online)
Language
English
URI
http://jjap.ipap.jp/link?JJAP/40/4470/
http://hdl.handle.net/10371/5354
DOI
https://doi.org/10.1143/JJAP.40.4470
https://doi.org/10.1143/JJAP.40.4470
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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