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Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO (0 < x < 0.47) thin films

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Authors
Park, W. I.; Yi, Gyu-Chul; Jang, H. M.
Issue Date
2001-09-24
Publisher
American Institute of Physics
Citation
Appl. Phys. Lett. 79, 2022 (2001)
Abstract
High-quality Zn1-xMgxO(0.00 less than or equal tox less than or equal to0.49) thin films were epitaxially grown at 500-650 degreesC on Al2O3(00.1) substrates using metalorganic vapor-phase epitaxy. By increasing the Mg content in the films up to 49 at. %, the c-axis constant of the films decreased from 5.21 to 5.14 Angstrom and no significant phase separation was observed as determined by x-ray diffraction measurements. Furthermore, the near-band-edge emission peak position showed blueshifts of 100, 440, and 685 meV at Mg content levels of 9, 29, and 49 at. %, respectively. Photoluminescent properties of the alloy films are also discussed.
ISSN
0003-6951 (print)1077-3118 (online)
Language
English
URI
http://link.aip.org/link/?APPLAB/79/2022/1
http://hdl.handle.net/10371/5355
DOI
https://doi.org/10.1063/1.1405811
https://doi.org/10.1063/1.1405811
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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