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Formation and characteristics of highly c-axis-oriented Bi3.25La0.75Ti3O12 thin films on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates

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Authors
Chon, Uong; Jang, Hyun M.; Lee, Sun-Hwa; Yi, Gyu-Chul
Issue Date
2001-11-01
Publisher
Materials Research Society
Citation
J. Mater. Res., 16, 3124 (2001)
Abstract
Highly c-axis-oriented Bi3.25La0.75Ti3O12 (BLT) films with a homogeneous in-plane orientation were successfully grown on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates by a sol-coating route. The substitution of lanthanum ions for bismuth ions in the layered perovskite suppressed the formation of pyrochlore phase and enhanced the c-axis-oriented growth. The c-axis-oriented BLT film fabricated on a Pt/Ti/SiO2/Si(100) substrate showed fatigue-free characteristics with a large remanent polarization of 26-28 muC/cm(2) and the coercive field of 50-75 KV/cm. These features significantly enhance the potential value of the BLT film for the applications to high-density ferroelectric random-access memories devices. In addition, the c-axis-oriented BLT film, with a homogeneous in-plane orientation on an amorphous surface, can be used as a suitable template material for applications to various electro-magneto-optic devices.
ISSN
0884-2914
Language
English
URI
http://www.mrs.org

http://hdl.handle.net/10371/5356
DOI
https://doi.org/10.1557/JMR.2001.0431

https://doi.org/10.1557/JMR.2001.0431
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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