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Compensation Model for n-type GaN
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yi, Gyu-Chul | - |
dc.contributor.author | Park, Won Il | - |
dc.date.accessioned | 2009-07-13T03:42:35Z | - |
dc.date.available | 2009-07-13T03:42:35Z | - |
dc.date.issued | 2001-11-11 | - |
dc.identifier.citation | Jpn. J. Appl. Phys. 40 (2001) 6243 | en |
dc.identifier.issn | 0021-4922 (print) | - |
dc.identifier.issn | 1347-4065 (online) | - |
dc.identifier.uri | http://link.aip.org/link/?APPLAB/69/3028/1 | - |
dc.identifier.uri | https://hdl.handle.net/10371/5357 | - |
dc.description.abstract | The defect structure for unintentionally doped and deliberately Se-doped, n-type GaN was investigated, For impurity doping, Se was incorporated into GaN films during vapor phase epitaxial growth. Both nominally undoped and Se-doped. n-type GaN films were highly compensated as determined by the Hall effect measurements and photoluminescence spectroscopy. It was also found that the compensation by acceptors increases with increasing Se doping concentration. Based upon these experiments and the theoretical calculations, a defect compensation model for n-type GaN was developed. | en |
dc.description.sponsorship | This research was sponsored by the KOSEF through the Regional University Research program and the Brain Korea 21 project. | en |
dc.language.iso | en | - |
dc.publisher | Japan Society of Applied Physics | en |
dc.subject | Se-doped GaN | en |
dc.subject | defect | en |
dc.subject | compensation model | en |
dc.subject | Hall effect | en |
dc.subject | photoluminescence | en |
dc.title | Compensation Model for n-type GaN | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 이규철 | - |
dc.contributor.AlternativeAuthor | 박원일 | - |
dc.identifier.doi | 10.1063/1.116828 | - |
dc.identifier.doi | 10.1063/1.116828 | - |
dc.citation.journaltitle | Japanese Journal of Applied Physics = JJAP | - |
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