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Dry etching of ZnO films and plasma-induced damage to optical properties

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Authors
Park, J. S.; Park, H. J.; Hahn, Y. B.; Yi, Gyu-Chul; Yoshikawa, A.
Issue Date
2003-03-14
Publisher
American Vacuum Society
Citation
J. Vac. Sci. Technol. B 21, 800 (2003)
Abstract
To study the effects of plasma chemistries on etch characteristics. and plasma-induced damage to the optical properties, dry etching of ZnO films has been carried out using inductively coupled plasmas of Cl-2 /Ar, Cl-2 /H-2 /Ar, and CH4 /H-2 /Ar. The CH4 /H-2 /Ar chemistry showed a faster etch rate and a better surface morphology than the Cl-2-based chemistries. Etched samples in all chemistries showed a substantial decrease in the PL intensity of band-edge luminescence mainly due to the plasma-induced damage. The CH4 /H-2 /Ar chemistry showed the least degradation of the optical properties.
ISSN
1071-1023
Language
English
URI
http://hdl.handle.net/10371/5360
DOI
https://doi.org/10.1116/1.1563252
https://doi.org/10.1116/1.1563252
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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