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Dry etching of ZnO films and plasma-induced damage to optical properties
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, J. S. | - |
dc.contributor.author | Park, H. J. | - |
dc.contributor.author | Hahn, Y. B. | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.contributor.author | Yoshikawa, A. | - |
dc.date.accessioned | 2009-07-13T04:08:54Z | - |
dc.date.available | 2009-07-13T04:08:54Z | - |
dc.date.issued | 2003-03-14 | - |
dc.identifier.citation | J. Vac. Sci. Technol. B 21, 800 (2003) | en |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://hdl.handle.net/10371/5360 | - |
dc.description.abstract | To study the effects of plasma chemistries on etch characteristics. and plasma-induced damage to the optical properties, dry etching of ZnO films has been carried out using inductively coupled plasmas of Cl-2 /Ar, Cl-2 /H-2 /Ar, and CH4 /H-2 /Ar. The CH4 /H-2 /Ar chemistry showed a faster etch rate and a better surface morphology than the Cl-2-based chemistries. Etched samples in all chemistries showed a substantial decrease in the PL intensity of band-edge luminescence mainly due to the plasma-induced damage. The CH4 /H-2 /Ar chemistry showed the least degradation of the optical properties. | en |
dc.description.sponsorship | This work was supported by Korea Research Foundation Grant No. KRF-99-005-D00037 through the Semiconductor Physics Research Center ~SPRC! at the Chonbuk National University. | en |
dc.language.iso | en | - |
dc.publisher | American Vacuum Society | en |
dc.title | Dry etching of ZnO films and plasma-induced damage to optical properties | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 이규철 | - |
dc.identifier.doi | 10.1116/1.1563252 | - |
dc.identifier.doi | 10.1116/1.1563252 | - |
dc.citation.journaltitle | Journal of Vacuum Science & Technology B | - |
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