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Near ultraviolet light emitting diode composed of n-GaN/ZnO coaxial nanorod heterostructures on a p-GaN layer

Cited 49 time in Web of Science Cited 50 time in Scopus
Authors
An, Sung Jin; Yi, Gyu-Chul
Issue Date
2007-09-20
Publisher
American Institute of Physics
Citation
Appl. Phys. Lett. 91, 123109 (2007)
Abstract
The authors report on the fabrication and characteristics of near ultraviolet nanorod light emitting diodes (LEDs) composed of n-GaN/ZnO nanorod heterostructures on p-GaN substrates. The nanorod LEDs consist of the vertically aligned n-GaN/ZnO coaxial nanorod arrays grown on a p-GaN substrate. The LEDs demonstrated strong near ultraviolet emission at room temperature. The nanorod LEDs were turned on a forward-bias voltage of 5 V, and exhibited a large light emitting area. From electroluminescent spectra, dominant emission peaks were observed at 2.96 and 3.24 eV for an applied current of 2 mA. The origins of the strong and large area light emission are also discussed in terms of enhanced carrier injection from n-GaN nanostructures to p-GaN substrates.
ISSN
0003-6951 (print)
1077-3118 (online)
Language
English
URI
http://link.aip.org/link/?APPLAB/91/123109/1

http://hdl.handle.net/10371/5366
DOI
https://doi.org/10.1063/1.2786852

https://doi.org/10.1063/1.2786852
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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