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Fabrication and photoluminescent characteristics of ZnO/Mg0.2Zn0.8O coaxial nanorod single quantum well structures

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Authors
Bae, Jun Young; Yoo, Jinkyung; Yi, Gyu-Chul
Issue Date
2006-10-25
Publisher
American Institute of Physics
Citation
Appl. Phys. Lett. 89, 173114 (2006)
Abstract
The authors report on fabrication and photoluminescent (PL) properties of ZnO/Mg0.2Zn0.8O coaxial nanorod quantum structures with various quantum well and barrier layer thicknesses. Employing catalyst-free metal-organic vapor-phase epitaxy, coaxial nanorod single quantum well structures were fabricated by the alternate heteroepitaxial growth of ZnO and Mg0.2Zn0.8O layers over the entire surfaces of the ZnO nanorods with fine thickness controls of the layers. The quantum confinement effect of carriers in coaxial nanorod quantum structures depends on the Mg0.2Zn0.8O quantum barrier layer thickness as well as the thickness of the ZnO quantum well layer. The temperature-dependent PL characteristics of the coaxial nanorod quantum structures are also discussed.
ISSN
0003-6951 (print)
1077-3118 (online)
Language
English
URI
http://link.aip.org/link/?APPLAB/89/173114/1

http://hdl.handle.net/10371/5408
DOI
https://doi.org/10.1063/1.2364463

https://doi.org/10.1063/1.2364463
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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