SHERP

Enhanced Secondary Electron Emission from Group III Nitride/ZnO Coaxial Nanorod Heterostructures

Cited 0 time in webofscience Cited 0 time in scopus
Authors
Lau, Shu Ping; Huang, Lei; Yu, Siu Fung; Yang, Huiying; Yoo, Jin Kyoung; An, Sung Jin; Yi, Gyu-Chul
Issue Date
2006-04-07
Publisher
John Wiley & Sons
Citation
small 2006, 2, 736
Keywords
heterostructures; nanorods; nitrides; secondary electron emission; semiconductors
Abstract
Needle work: AlN/ZnO and GaN/ZnO coaxial nanoneedle heterostructures (see TEM image) have a higher secondary electron emission (SEE) yield () than thin films of AlN and GaN deposited on Si substrates. The dependence of the SEE on the incidence angle of the beam indicates that these heterostructures do not follow the power law. The value of the heterostructures is enhanced by the inherited nanostructure from the ZnO nanoneedle template.
ISSN
1613-6810
Language
English
URI
http://hdl.handle.net/10371/5447
DOI
https://doi.org/10.1002/smll.200500424
https://doi.org/10.1002/smll.200500424
Files in This Item:
There are no files associated with this item.
Appears in Collections:
College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse