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Enhanced Secondary Electron Emission from Group III Nitride/ZnO Coaxial Nanorod Heterostructures

DC FieldValueLanguage
dc.contributor.authorLau, Shu Ping-
dc.contributor.authorHuang, Lei-
dc.contributor.authorYu, Siu Fung-
dc.contributor.authorYang, Huiying-
dc.contributor.authorYoo, Jin Kyoung-
dc.contributor.authorAn, Sung Jin-
dc.contributor.authorYi, Gyu-Chul-
dc.date.accessioned2009-07-14T04:43:20Z-
dc.date.available2009-07-14T04:43:20Z-
dc.date.issued2006-04-07-
dc.identifier.citationsmall 2006, 2, 736en
dc.identifier.issn1613-6810-
dc.identifier.urihttp://hdl.handle.net/10371/5447-
dc.description.abstractNeedle work: AlN/ZnO and GaN/ZnO coaxial nanoneedle heterostructures (see TEM image) have a higher secondary electron emission (SEE) yield () than thin films of AlN and GaN deposited on Si substrates. The dependence of the SEE on the incidence angle of the beam indicates that these heterostructures do not follow the power law. The value of the heterostructures is enhanced by the inherited nanostructure from the ZnO nanoneedle template.en
dc.description.sponsorshipThis work was supported by NTU RGM 17/04, the National Creative Research Initiative Project, and the Center for Nanostructured Materials Technology under the 21st Century Frontier R&D Program of the Ministry of Science and Technology, Korea.en
dc.language.isoenen
dc.publisherJohn Wiley & Sonsen
dc.subjectheterostructuresen
dc.subjectnanorodsen
dc.subjectnitridesen
dc.subjectsecondary electron emissionen
dc.subjectsemiconductorsen
dc.titleEnhanced Secondary Electron Emission from Group III Nitride/ZnO Coaxial Nanorod Heterostructuresen
dc.typeArticleen
dc.contributor.AlternativeAuthor유진경-
dc.contributor.AlternativeAuthor안성진-
dc.contributor.AlternativeAuthor이규철-
dc.identifier.doi10.1002/smll.200500424-
dc.identifier.doi10.1002/smll.200500424-
dc.citation.journaltitleSmall-
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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