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Fabrication and electrical characteristics of dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistors

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Authors
Kim, Hyeong-Jin; Lee, Chul-Ho; Kim, Dong-Wook; Yi, Gyu-Chul
Issue Date
2006-05-19
Publisher
Institute of Physics
Citation
Nanotechnology 17 S327
Abstract
We fabricated dual-gate ZnO nanorod metal - oxide semiconductor field-effect transistors(MOSFETs) where a Si substrate with a 200 nm thick SiO2 layer was used as a bottom-gate and a Au electrode with a 100 nm thick SiO2 layer was used as a top-gate. From current - voltage characteristic curves of the nanorod MOSFETs, the top-gate mode operation exhibited significantly enhanced device characteristics compared with the bottom-gate case. A switch current ON/OFF ratio of the top-gate mode (10(5) - 10(7)) was at least one order of magnitude larger than that of the bottom-gate mode (10(4) - 10(6)). Normalized transconductance, one of the key transistor parameters, was also drastically increased from 0.34 mu S mu m(-1) for the bottom-gate to 2.4 mu S mu m(-1) for the top-gate mode. The enhanced device performance can be explained in terms of geometric field enhancement and the resulting efficient gating effect for the top-gate mode geometry.
ISSN
0957-4484
Language
English
URI
http://hdl.handle.net/10371/5451
DOI
https://doi.org/10.1088/0957-4484/17/11/S16
https://doi.org/10.1088/0957-4484/17/11/S16
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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