Publications
Detailed Information
Fabrication and electrical characteristics of dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Hyeong-Jin | - |
dc.contributor.author | Lee, Chul-Ho | - |
dc.contributor.author | Kim, Dong-Wook | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.date.accessioned | 2009-07-14T05:04:37Z | - |
dc.date.available | 2009-07-14T05:04:37Z | - |
dc.date.issued | 2006-05-19 | - |
dc.identifier.citation | Nanotechnology 17 S327 | en |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://hdl.handle.net/10371/5451 | - |
dc.description.abstract | We fabricated dual-gate ZnO nanorod metal - oxide semiconductor field-effect transistors(MOSFETs) where a Si substrate with a 200 nm thick SiO2 layer was used as a bottom-gate and a Au electrode with a 100 nm thick SiO2 layer was used as a top-gate. From current - voltage characteristic curves of the nanorod MOSFETs, the top-gate mode operation exhibited significantly enhanced device characteristics compared with the bottom-gate case. A switch current ON/OFF ratio of the top-gate mode (10(5) - 10(7)) was at least one order of magnitude larger than that of the bottom-gate mode (10(4) - 10(6)). Normalized transconductance, one of the key transistor parameters, was also drastically increased from 0.34 mu S mu m(-1) for the bottom-gate to 2.4 mu S mu m(-1) for the top-gate mode. The enhanced device performance can be explained in terms of geometric field enhancement and the resulting efficient gating effect for the top-gate mode geometry. | en |
dc.description.sponsorship | This work was supported by the National Creative Research Initiative Project of the Ministry of Science and Technology. | en |
dc.language.iso | en | en |
dc.publisher | Institute of Physics | en |
dc.title | Fabrication and electrical characteristics of dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistors | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 김형진 | - |
dc.contributor.AlternativeAuthor | 이철호 | - |
dc.contributor.AlternativeAuthor | 김동욱 | - |
dc.contributor.AlternativeAuthor | 이규철 | - |
dc.identifier.doi | 10.1088/0957-4484/17/11/S16 | - |
dc.citation.journaltitle | Nanotechnology | - |
- Appears in Collections:
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.