S-Space College of Natural Sciences (자연과학대학) Dept. of Physics and Astronomy (물리·천문학부) Physics (물리학전공) Journal Papers (저널논문_물리학전공)
Low-temperature (similar to 270 degrees C) growth of vertically aligned ZnO nanorods using photoinduced metal organic vapour phase epitaxy
- Yatsui, T; Lim, J; Nakamata, T; Kitamura, K; Ohtsu, M; Yi, Gyu-Chul
- Issue Date
- Institute of Physics
- Nanotechnology 18 065606
- We successfully produced a drastic decrease in the required growth temperature of single-crystalline ZnO nanorods, and enabled successful growth of vertically aligned ZnO nanorods on a Si(100) substrate using photoinduced metal organic vapour phase epitaxy (MOVPE). We introduced 325 nm light during the MOVPE growth, and achieved vertical growth of single-crystalline ZnO nanorods with a hexagonal crystal structure on Si(100) at a growth temperature of 270 degrees C. The successful low-temperature growth of ZnO nanorods on the Si(100) substrate described here is a promising step toward designing nanoscale photonic and electronic devices required by future systems.
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