SHERP

Low-temperature (similar to 270 degrees C) growth of vertically aligned ZnO nanorods using photoinduced metal organic vapour phase epitaxy

Cited 0 time in webofscience Cited 0 time in scopus
Authors
Yatsui, T; Lim, J; Nakamata, T; Kitamura, K; Ohtsu, M; Yi, Gyu-Chul
Issue Date
2007-02-14
Publisher
Institute of Physics
Citation
Nanotechnology 18 065606
Abstract
We successfully produced a drastic decrease in the required growth temperature of single-crystalline ZnO nanorods, and enabled successful growth of vertically aligned ZnO nanorods on a Si(100) substrate using photoinduced metal organic vapour phase epitaxy (MOVPE). We introduced 325 nm light during the MOVPE growth, and achieved vertical growth of single-crystalline ZnO nanorods with a hexagonal crystal structure on Si(100) at a growth temperature of 270 degrees C. The successful low-temperature growth of ZnO nanorods on the Si(100) substrate described here is a promising step toward designing nanoscale photonic and electronic devices required by future systems.
ISSN
0957-4484
Language
English
URI
http://hdl.handle.net/10371/5467
DOI
https://doi.org/10.1088/0957-4484/18/6/065606
https://doi.org/10.1088/0957-4484/18/6/065606
Files in This Item:
There are no files associated with this item.
Appears in Collections:
College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse