SHERP

Position-Controlled Selective Growth of ZnO nanorods on Si Substrates Using Facet-Controlled GaN Micropatterns

Cited 0 time in webofscience Cited 0 time in scopus
Authors
Hong, Young Joon; An, Sung Jin; Jung, Hye Seong; Lee, Chul-Ho; Yi, Gyu-Chul
Issue Date
2007-12-11
Publisher
Wiley-Blackwell
Citation
Adv. Mater. 2007, 19, 4416
Keywords
Gallium Nitride; Inorganic Nanostructures; Nanorods; Silicon; Zinc Oxide
Abstract
ZnO nanorod arrays are selectively grown on 31 Substrates using facet-controlled GaN micropatterns with highly anisotropic surface energies. Although we used facet-controlled GaN micropatterns for selective MOPVE growth, other micropatterns can be employed if the difference in surface energies between a top surface and the sidewalls of a micropattern is large enough to affect heteroepitaxial selective growth of the nanorods. This growth may be expanded to create many other position-controlled semiconductor nanorods.
ISSN
0935-9648
Language
English
URI
http://hdl.handle.net/10371/5469
DOI
https://doi.org/10.1002/adma.200701203
https://doi.org/10.1002/adma.200701203
Files in This Item:
There are no files associated with this item.
Appears in Collections:
College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse