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Growth and characterization of Nickel Silicide and Ge on Si surfaces : a scanning tunneling microscopy study

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Authors
강윤호
Advisor
국양
Issue Date
1996
Publisher
서울대학교 대학원
Keywords
초고진공 주사 터널링 전자 현미경UHV STM성장Growth실리콘Si니켈 실리사이드Nickel SilicideMetal-Semiconductor Contact게르마늄
Description
Thesis (doctoral)--서울대학교 대학원 :물리학과 고체물리전공,1996.
Language
English
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000082556

http://hdl.handle.net/10371/55874
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Theses (Ph.D. / Sc.D._물리학전공)
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