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Growth and characterization of Nickel Silicide and Ge on Si surfaces : a scanning tunneling microscopy study
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- Authors
- Advisor
- 국양
- Issue Date
- 1996
- Publisher
- 서울대학교 대학원
- Keywords
- 초고진공 주사 터널링 전자 현미경 ; UHV STM ; 성장 ; Growth ; 실리콘 ; Si ; 니켈 실리사이드 ; Nickel Silicide ; Metal-Semiconductor Contact ; 게르마늄
- Description
- Thesis (doctoral)--서울대학교 대학원 :물리학과 고체물리전공,1996.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000082556
https://hdl.handle.net/10371/55874
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