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Growth and characterization of strained InGaAs(P)InP and its application to laser diode for optical communication
InGaAs(P)InP 변형층 성장과 분석 및 광통신용 레이저 다이오드에의 응용

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Authors
유상완
Advisor
최병두
Issue Date
1998
Publisher
서울대학교 대학원
Keywords
변형층strainInGaAs(P)/InPdiffusionMOVPEstrain relaxation확산energy band structure스트레인 풀림quantum well
Description
Thesis (doctoral)--서울대학교 대학원 :물리학과,1998.
Language
English
URI
http://library.snu.ac.kr/search/DetailView.ax?sid=1&cid=0000757049

http://hdl.handle.net/10371/55892
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Theses (Ph.D. / Sc.D._물리학전공)
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