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Liquid phase epitaxial growth of high quality InGaP and InGaAsP and characterization of deep levels : 액상적층법을 이용한 고품위 InGaP 와 InGaAsP 성장과 깊은준위들에 대한 특성분석

DC Field Value Language
dc.contributor.advisor최병두-
dc.contributor.author권호기-
dc.date.accessioned2010-02-22-
dc.date.available2010-02-22-
dc.date.copyright1997.-
dc.date.issued1997-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000078090eng
dc.identifier.urihttps://hdl.handle.net/10371/55919-
dc.descriptionThesis (doctoral)--서울대학교 대학원 :물리학과,1997.en
dc.format.extentviii, 104 p.en
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subject액상적층법en
dc.subjectliquid phase epitaxyen
dc.subject깊은준위 과도분광법en
dc.subjectdeep level transient spectroscopyen
dc.subject광전도도 지속en
dc.subjectpersistent photoconductivityen
dc.subjectDX centeren
dc.titleLiquid phase epitaxial growth of high quality InGaP and InGaAsP and characterization of deep levelsen
dc.title.alternative액상적층법을 이용한 고품위 InGaP 와 InGaAsP 성장과 깊은준위들에 대한 특성분석-
dc.typeThesis-
dc.contributor.department물리학과-
dc.description.degreeDoctoren
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