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Negative resistance of GaAs diode co-doped with Si and transition impurities : 규소와 전이원소가 같이 첨가된 갈륨비소 다이오드의 부저항
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- Authors
- Advisor
- 최병두
- Issue Date
- 1995
- Publisher
- 서울대학교 대학원
- Keywords
- GaAs Diodes ; 갈륨비소 다이오드 ; Single-Step Liquid Phase Epitaxy ; 엑상적층 성장법 ; P-I-N Structure ; 반절연 특성 ; Negative Resistance ; P-I-N 구조 ; Double-Injection ; 부저항
- Description
- Thesis (doctoral)--서울대학교 대학원 :물리학과,1995.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000085695
https://hdl.handle.net/10371/55937
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