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Studies on interface properties and deep donor levels in InGaP : InGaP의 계면특성과 깊은 주개준위에 관한 연구
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- Authors
- Advisor
- 최병두
- Issue Date
- 1995
- Publisher
- 서울대학교 대학원
- Keywords
- InGaP ; 계면상태 ; Interface traps ; 황처리 ; Sulfur treatments ; 과도전기용량법 ; DX centers ; DLTS
- Description
- Thesis (doctoral)--서울대학교 대학원 :물리학과,1995.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000085623
https://hdl.handle.net/10371/55947
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