Publications
Detailed Information
Dependence of carbon incorporation rate on crystallographic orientation of GaAs grown by MOCVD using CCI4 : MOCVV장치로 기른 GaAs를 CCI4로 도핑시켰을 때의 탄소도핑효율의 기판결정방향에 대한 의존성
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 최병두 | - |
| dc.contributor.author | 이병양 | - |
| dc.date.accessioned | 2010-02-22 | - |
| dc.date.available | 2010-02-22 | - |
| dc.date.copyright | 1996. | - |
| dc.date.issued | 1996 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000081931 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/56163 | - |
| dc.description | Thesis (master`s)--서울대학교 대학원 :물리학과,1996. | en |
| dc.format.extent | 33 p. | en |
| dc.language.iso | en | en |
| dc.publisher | 서울대학교 대학원 | en |
| dc.title | Dependence of carbon incorporation rate on crystallographic orientation of GaAs grown by MOCVD using CCI4 | en |
| dc.title.alternative | MOCVV장치로 기른 GaAs를 CCI4로 도핑시켰을 때의 탄소도핑효율의 기판결정방향에 대한 의존성 | - |
| dc.type | Thesis | - |
| dc.contributor.department | 물리학과 | - |
| dc.description.degree | Master | en |
- Appears in Collections:
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.