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Damascene Cu electrodeposition on metal organic chemical vapor deposition-grown Ru thin film barrier

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Authors
Cho, Sung Ki; Kim, Soo-Kil; Han, Hee; Kim, Jae Jeong; Oh, Seung Mo
Issue Date
2004
Publisher
American Vacuum Society
Citation
J. Vac. Sci. Technol. B 22, 2649 (2004)
Abstract
Ru thin film grown by metal organic chemical vapor deposition (MOCVD) was applied in this study
as a substrate for superconformal Cu electrodeposition as well as a Cu diffusion barrier at a
Cu/Ru/SiO2 /Si multilayer system for microelectronics. Bis (ethyl-p-cyclopentadienyl) Ru-based
MOCVD Ru thin film had a roughness of about 12% of its thickness and well-developed textures
with high purity. It also showed good step coverage in damascene trench structure. Pd
catalyst-mediated Cu electrodeposition on Ru surface accomplished formation of continuous Cu
film. For gap filling in single damascene structure, bumps indicative of bottom-up acceleration and
superfilling were observed during two-step Cu electrodeposition on Ru substrate which involved
seeding and filling with conventional three additives system. 30 nm-thick Ru film effectively
worked as a barrier for interdiffusion and/or reaction between layers even after annealing at 800 °C
for 30 min.With the exception of slight agglomeration of Cu at elevated temperature, no silicidation
or AES-profile broadening was observed in a Cu/Ru/SiO2 /Si system.
ISSN
1071-1023
Language
English
URI
http://hdl.handle.net/10371/5814
DOI
https://doi.org/10.1116/1.1819911
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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