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Residual Stress Behavior in Methylsilsesquioxane-Based Dielectric Thin Films
Cited 10 time in
Web of Science
Cited 11 time in Scopus
- Authors
- Issue Date
- 2001-10-01
- Publisher
- Taylor & Francis
- Citation
- Mol. Cryst. Liq. Cryst., 371, 397
- Keywords
- methylsilsesquioxane ; thin film ; low dielectric ; residual stress ; thermal stress ; refractive index ; crack ; craze ; X-ray diffraction
- Abstract
- Residual stress of methylsilsequioxane film, which was spin-coated on silicon substrate and followed by soft-baking, was measured in-situ during curing and subsequent cooling with varying processing conditions. The thickness and refractive index of the cured films were measured using ellipsometry. Their structure was also examined by X-ray diffraction.
- ISSN
- 1542-1406 (print)
1563-5287 (online)
- Language
- English
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