Preparation and Characterization of Low Dielectric Methyl Silsesquioxane (MSSQ) Thin Films

Abstract

As feature sizes in integrated circuits approach 0.18 ㎛ and below, problems such as interconnect RC delay and crosstalk become more serious. Materials with low dielectric constants are needed to solve these problems. We applied methyl silsesquioxane (MSSQ) as a low dielectric material and studied the film formation condition and the electrical properties of MSSQ films. MSSQ dissolved in a propylene glycol methyl ether acetate (PGMEA) and MSSQ/PGMEA solution was spun on glass substrates at various concentrations. Spinning at 2,500 rpm for 30 sec resulted in films with thicknesses of 6,500 A. Then, we cured the films by heating and measured the electrical properties of samples sandwiched between Al electrodes. The dielectric constant was ~ 2.7, the breakdown strength was about 2.3 MV/cm, and the leakage current was 5.4 X 10-10 A/cm2. Dynamic Mechanical Analysis (DMA) indicated that the curing reaction started at about 200 ℃ and proceeded very fast up to 250 ℃. The structural change in the MSSQ films during curing was monitored by following the Fourier Transform Infrared (FTIR) absorption intensity of the Si-O stretching vibration, which showed that the Si-O structure became more asymmetric during curing and/or network formation.