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Modeling of the segregation probability of Ge during Si GSMBE growth on Si₁[-x]Ge[x] alloys : 실리콘-게르마늄 기판 위에서 실리콘 GSMBE 성장시 게르마늄원자의 표면으로의 이동에 대한 모델링
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- Authors
- Advisor
- 이홍희
- Issue Date
- 1998
- Publisher
- 서울대학교 대학원
- Description
- Thesis (master`s)--서울대학교 대학원 :화학공학과,1998.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000075686
https://hdl.handle.net/10371/58954
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