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Compensation effect in the rate of solid-phase epitaxial growth of Si1-xGex alloys

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Authors
Suh, K. Y.; Lee, Hong H.
Issue Date
1997-05-15
Publisher
American Institute of Physics
Citation
J. Appl. Phys. 81, 7067 (1997)
Keywords
KINETICS
Abstract
The compensation effect, well known in catalytic reactions, is shown to apply equally well to the solid-phase epitaxial (SPE) growth of Si1-xGex alloys. A linear relationship exists between the logarithm of the pre-exponential factor and the activation energy of the SPE growth rate. This linear relationship, together with the activation energy obtained earlier, enables one to completely describe the growth rate of Si1-xGex alloys. The effect holds for both strained and unstrained SPE. The model is applicable to other binary alloys.
ISSN
0021-8979
Language
English
URI
http://hdl.handle.net/10371/6246
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Mechanical Aerospace Engineering (기계항공공학부)Journal Papers (저널논문_기계항공공학부)
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