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Compensation effect in the rate of solid-phase epitaxial growth of Si1-xGex alloys
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Suh, K. Y. | - |
| dc.contributor.author | Lee, Hong H. | - |
| dc.date.accessioned | 2009-08-06T05:06:43Z | - |
| dc.date.available | 2009-08-06T05:06:43Z | - |
| dc.date.issued | 1997-05-15 | - |
| dc.identifier.citation | J. Appl. Phys. 81, 7067 (1997) | en |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/6246 | - |
| dc.description.abstract | The compensation effect, well known in catalytic reactions, is shown to apply equally well to the solid-phase epitaxial (SPE) growth of Si1-xGex alloys. A linear relationship exists between the logarithm of the pre-exponential factor and the activation energy of the SPE growth rate. This linear relationship, together with the activation energy obtained earlier, enables one to completely describe the growth rate of Si1-xGex alloys. The effect holds for both strained and unstrained SPE. The model is applicable to other binary alloys. | en |
| dc.language.iso | en | en |
| dc.publisher | American Institute of Physics | en |
| dc.subject | KINETICS | en |
| dc.title | Compensation effect in the rate of solid-phase epitaxial growth of Si1-xGex alloys | en |
| dc.type | Article | en |
| dc.contributor.AlternativeAuthor | 서갑양 | - |
| dc.contributor.AlternativeAuthor | 이홍희 | - |
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