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Effect of processing conditions on the growth of strained Si1-xGex layers on Si

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Authors
Suh, K. Y.; Lee, Hong H.
Issue Date
1998-08-15
Publisher
American Institute of Physics
Citation
J. Appl. Phys. 84, 2361 (1998)
Keywords
SURFACE-MORPHOLOGYEVOLUTIONEPITAXYFILMS
Abstract
We investigate several factors that determine the surface morphology in heteroepitaxial growth of Si1-xGex films on Si, which include composition, temperature, and pressure. Phase boundary lines are derived that define the regions for planar and island growth in terms of composition-temperature and composition-pressure. Also derived is the roughening characteristic length as a function of temperature, pressure, and characteristic time. Our results can explain the literature data satisfactorily.
ISSN
0021-8979
Language
English
URI
http://hdl.handle.net/10371/6256
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Mechanical Aerospace Engineering (기계항공공학부)Journal Papers (저널논문_기계항공공학부)
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