SHERP

Two-step kinetics of As/P exchange reaction

Cited 0 time in webofscience Cited 0 time in scopus
Authors
Suh, K. Y.; Lee, Hong H.; Yoon, E
Issue Date
1999-01-01
Publisher
American Institute of Physics
Citation
J. Appl. Phys. 85, 233 (1999)
Keywords
QUANTUM-WELLSSURFACEGROWTHEPITAXYLAYERS
Abstract
A simple two-step mechanism is used to derive the kinetics of the As/P exchange reaction which takes place on an epitaxially grown InP surface exposed to As flux. The first step involves surface exchange of arsenic with phosphorus, which is then followed by the second step, bulk exchange of arsenic (arsenic incorporation). Two possible choices are investigated for bulk exchange: the same exchange rate constant in the bulk and the same ratio of exchange rate constants in the bulk. Transient and steady-state profiles of As composition and the maximum depth of the As/P exchange reaction are derived analytically.
ISSN
0021-8979
Language
English
URI
http://hdl.handle.net/10371/6262
Files in This Item:
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Mechanical Aerospace Engineering (기계항공공학부)Journal Papers (저널논문_기계항공공학부)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse