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Optimized Surface Pre-treatments for Cu Electroless Plating in ULSI Device Interconnection

Cited 32 time in Web of Science Cited 31 time in Scopus
Authors
Kim, Jae Jeong; Cha, Seung Hwan
Issue Date
2001
Publisher
Japan Society of Applied Physics
Citation
Japanese Journal of Applied Physics 40 (2001) 7151-7155
Keywords
pretreatmentselectrolesscopperactivationpalladiumtitanium nitride
Abstract
We investigated the effects of under layer pretreatments on Cu electroless deposition to optimize the resistivity and morphology of the Cu. The pretreatments used in the Cu electroless plating process consisted of the removal of the titanium oxide layer on the barrier metal, TiN, and the deposition of Pd to activate the TiN diffusion barrier layer. Surface pretreatment using a 1%HF solution to remove the native Ti oxide formed on a TiN diffusion barrier layer showed a remarkable surface conditioning effect for the catalytic metal activation stage in Cu electroless plating, even in the absence of a wetting agent. Microcavities generated during Ti oxide etching are believed to be the key factor for the improved uniformity of the deposited catalytic metal on the pretreated TiN layer. Electroless plated Cu layers on non-uniform or rough Pd layers exhibited high resistivity and RMS roughness.
ISSN
0021-4922
Language
English
URI
http://hdl.handle.net/10371/63268
DOI
https://doi.org/10.1143/JJAP.40.7151
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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