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Detailed Information
Compact I-V model for short channel Twin Silicon Nanowire MOSFETs (TSNWFETs) : 숏채널 Twin Silicon Nanowire MOSFETs에서의 I-V 컴팩트 모델링
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- Authors
- Advisor
- 신형철
- Issue Date
- 2010
- Publisher
- 서울대학교 대학원
- Keywords
- 실리콘 나노와이어 ; Non-classical MOSFET ; 문턱전압 ; Silicon Nanowire ; 전류-전압 특성 ; I-V charactistic ; DIBL ; Threshold Voltage ; 비고전적 MOSFET ; DIBL
- Description
- 학위논문(석사) --서울대학교 대학원 :전기. 컴퓨터공학부,2010.2.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000033425
https://hdl.handle.net/10371/65168
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