Effects of an added iodine source (C2H5I) on Ru Metalorganic Chemical Vapor Deposition

Abstract

The effects of ethyl iodide (C2H5I) as an iodine source are investigated for Ru films grown on TiN/Ti/Si wafers by MOCVD using Ru-(EtCp)2 as a precursor. Although the introduction of the additional step of adsorbing C2H5I during the deposition is found not to affect the orientation of the ruthenium films deposited, the resistivity of films thinner than 40nm decreases by 20% or less. Moreover the introduction of iodine extends the surface-reaction-limited regime of the deposition to 400 °C on account of which an increased deposition rate and improved film properties can be expected.