Publications
Detailed Information
Bottom-up filling in Cu electroless deposition using bis-(3-sulfopropyl)-disulfide (SPS)
Cited 60 time in
Web of Science
Cited 60 time in Scopus
- Authors
- Issue Date
- 2005-05-30
- Publisher
- Elsevier
- Citation
- Electrochimica Acta 50 (2005) 3563–3568
- Keywords
- Cu electroless deposition ; SPS ; Bottom-up filling ; Additive ; QCM
- Abstract
- The effect of bis-(3-sulfopropyl)-disulfide (SPS) in Cu electroless deposition was investigated. Quartz crystal microbalance (QCM) was
used to measure the current density in a complete electroless bath, and the accelerating and suppressing effect of SPS were confirmed according
to its concentration. The highest acceleration effect appeared at 0.5 mg l−1 of SPS with 4.24mAcm−2 of current density while the current
density decreased to 0.485mAcm−2 at 5.0 mg l−1 of SPS. From differences in the effect of SPS according to the concentration, Cu bottom-up
filling was achieved using electroless deposition. The adsorbed sulfur compounds on the surface produced CuS, which acted as an impurity
to cause an increase of the film resistivity.
- ISSN
- 0013-4686
- Language
- English
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.