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Effects of Pd activation on the self annealing of electroless copper deposition using Co(II)-ethylenediamine as a reducing agent

DC Field Value Language
dc.contributor.authorLee, Chang Hwa-
dc.contributor.authorKim, Jae Jeong-
dc.date.accessioned2010-05-12T05:19:19Z-
dc.date.available2010-05-12T05:19:19Z-
dc.date.issued2005-03-11-
dc.identifier.citationJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures 23(2), 475-479en
dc.identifier.issn1071-1023-
dc.identifier.urihttps://hdl.handle.net/10371/65987-
dc.description.abstractWe investigated the effect of Pd activation on self-annealing in electroless Cu deposits using
CosIId–ethylenediamine as a reducing agent. The size and population of Pd particles were controlled
by Pd ion concentration and activation time, which resulted in changes in the sheet resistances.
While the low population of Pd particles s,109 cm−2d was unable to create completely continuous
Cu film in subsequent electroless deposition and induced high film resistivity due to the voids, Pd
particles that were over 20 nm in diameter increased the resistivity by raising the surface roughness
of the Cu film. The optimal Pd activation condition was with Pd particle density of 1.73
3109 cm−2 with 14 nm diameters. The resistivity of the Cu film in the optimal activation condition
decreased to 2.46 mV cm. The deposited Cu film showed a low resistivity and a strong Cu s111d
texture with the decrease in size and increase in the number of the Pd particles.
en
dc.language.isoenen
dc.publisherAmerican Vacuum Societyen
dc.subjectcopperen
dc.subjectelectroless depositionen
dc.subjectcatalysisen
dc.subjectpalladiumen
dc.subjectparticle sizeen
dc.subjectsurface roughnessen
dc.subjectintegrated circuit manufactureen
dc.subjectinterconnectionsen
dc.titleEffects of Pd activation on the self annealing of electroless copper deposition using Co(II)-ethylenediamine as a reducing agenten
dc.typeArticleen
dc.contributor.AlternativeAuthor이창화-
dc.contributor.AlternativeAuthor김재정-
dc.identifier.doi10.1116/1.1868673-
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