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Improvement of electrolessly gap-filled Cu using 2,2'-dipyridyl and bis-(3-sulfopropyl)-disulfide (SPS)
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Chang Hwa | - |
dc.contributor.author | Lee, Sang Chul | - |
dc.contributor.author | Kim, Jae Jeong | - |
dc.date.accessioned | 2010-05-14T05:28:34Z | - |
dc.date.available | 2010-05-14T05:28:34Z | - |
dc.date.issued | 2005-06-07 | - |
dc.identifier.citation | Electrochemical and Solid-State Letters, 8 (8), C110-C113 | en |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://hdl.handle.net/10371/66124 | - |
dc.description.abstract | The use of bis~3-sulfopropyl! disulfide ~SPS! in Cu electroless deposition resulted in Cu bottom-up filling. However, the high
accelerating effect of SPS led to a poor electrical property of the film and generated many voids in the film by increasing the surface roughness and causing unstable deposition behavior. The addition of 2,28-dipyridyl together with SPS substantially improved the film quality of the gap-filled Cu maintaining the bottom-up filling behavior. It lowered the film resistivity by approximately 23% and enhanced the crystallinity. No voids were detected in the as-deposited Cu even after annealing. | en |
dc.language.iso | en | en |
dc.publisher | Electrochemical Society | en |
dc.subject | deposition | en |
dc.subject | electrical resistivity | en |
dc.subject | electroless deposition | en |
dc.subject | electrical resistivity | en |
dc.subject | metallic thin films | en |
dc.subject | voids (solid) | en |
dc.subject | surface roughness | en |
dc.subject | annealing | en |
dc.subject | integrated circuit | en |
dc.subject | interconnections | en |
dc.title | Improvement of electrolessly gap-filled Cu using 2,2'-dipyridyl and bis-(3-sulfopropyl)-disulfide (SPS) | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 이창화 | - |
dc.contributor.AlternativeAuthor | 이상철 | - |
dc.contributor.AlternativeAuthor | 김재정 | - |
dc.identifier.doi | 10.1149/1.1943551 | - |
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