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A Multi-Mode Power Gating Structure for Low-Voltage Deep-Submicron CMOS ICs
Cited 44 time in
Web of Science
Cited 66 time in Scopus
- Authors
- Issue Date
- 2007-07
- Citation
- IEEE Transactions on Circuits and Systems Part 2 Express Briefs, vol. 54, no. 7, pp. 586-590
- Keywords
- Deep-submicrometer CMOS ; ground bounce noise ; low voltage ; multi-threshold CMOS (MTCMOS)
- Abstract
- Most existing power gating structures provide only
one power-saving mode. We propose a novel power gating structure
that supports both a cutoff mode and an intermediate powersaving
and data-retaining mode. Experiments with test structures
fabricated in 0.13- mCMOSbulk technology showthat our power
gating structure yields an expanded design space with more powerperformance
tradeoff alternatives.
- ISSN
- 1549-7747
- Language
- English
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