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Optimization of a Pretreatment for Copper Electroless Deposition on Ta Substrates
Cited 19 time in
Web of Science
Cited 10 time in Scopus
- Authors
- Issue Date
- 2007-02-01
- Publisher
- Electrochemical Society
- Citation
- Journal of the Electrochemical Society, 154(3), D182-D187
- Abstract
- We investigated pretreatment methods for Cu electroless deposition on a Ta substrate. The native oxide on the substrate was
effectively etched by the addition of HNO3 to a HF diluted solution and this was confirmed though X-ray photoelectron spectroscopy
and chronopotentiometry. To form the Pd catalyst for Cu electroless deposition, a two-step Sn sensitization and Pd
activation was carried out. The oxide removal enhanced the adsorption of the Sn ions on the Ta substrate and led to well
distributed Pd clusters through Pd activation. By measuring the resistivity of the film, the Sn sensitization time and the Pd
activation time were optimized through changes in the incubation time, at which the sheet resistance abruptly decreased by the film
formation via the coalescence of Cu grains. The resistivity of the Cu electroless film deposited using the optimized pretreatment
conditions was 3.59 cm, which was further reduced to 2.7 cm through an annealing process.
- ISSN
- 0013-4651
- Language
- English
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