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Local Corrosion of the Oxide Passivation Layer during Cu Chemical Mechanical Polishing
Cited 4 time in
Web of Science
Cited 6 time in Scopus
- Authors
- Issue Date
- 2009-10-01
- Publisher
- Electrochemical Society
- Citation
- Electrochemical and Solid state Letters, 12(12), H433-H436
- Abstract
- In this article, we analyze the effect of complexing agents in Cu chemical mechanical polishing slurry on the formation of oxide
and the evolution of stress. The passivation property and surface morphology of the oxide on the surface showed significant
differences depending on the kind of complexing agent. Oxalic acid showed fast oxide formation with poor passivation performance,
and this caused large tensile stress evolution over 250 MPa in the Cu film. The synergetic effect of stress evolution and
temperature increase due to the friction during the polishing caused severe pitting of the Cu surface after polishing in oxalic-acidbased
slurry.
- ISSN
- 1099-0062
- Language
- English
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