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Local Corrosion of the Oxide Passivation Layer during Cu Chemical Mechanical Polishing

Cited 4 time in Web of Science Cited 6 time in Scopus
Authors

Kang, Min Cheol; Kim, Yung Jun; Koo, Hyo-Chol; Cho, Sung Ki; Kim, Jae Jeong

Issue Date
2009-10-01
Publisher
Electrochemical Society
Citation
Electrochemical and Solid state Letters, 12(12), H433-H436
Abstract
In this article, we analyze the effect of complexing agents in Cu chemical mechanical polishing slurry on the formation of oxide
and the evolution of stress. The passivation property and surface morphology of the oxide on the surface showed significant
differences depending on the kind of complexing agent. Oxalic acid showed fast oxide formation with poor passivation performance,
and this caused large tensile stress evolution over 250 MPa in the Cu film. The synergetic effect of stress evolution and
temperature increase due to the friction during the polishing caused severe pitting of the Cu surface after polishing in oxalic-acidbased
slurry.
ISSN
1099-0062
Language
English
URI
https://hdl.handle.net/10371/68295
DOI
https://doi.org/10.1149/1.3236391
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