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Fabrication of thermally stable multilayer thin films and their device application : 열적으로 안정한 다층 초박막의 제조 및 전자소자로의 응용
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- Authors
- Advisor
- 차국헌
- Issue Date
- 2003
- Publisher
- 서울대학교 대학원
- Keywords
- 스핀자기조립 ; Spin self-assembly ; 담지자기조립 ; Dip self-assembly ; 열적안정성 ; Thermal stability ; p-n 접합 다이오드 ; P-n junction diode ; 절연체 두께 ; Insulator thickness
- Description
- Thesis (master`s)--서울대학교 대학원 :응용화학부,2003.
- Abstract
- Organic/inorganic thin films composed of poly-4-vinylpyridine (PVP) and
cadmium selenide (CdSe) were prepared with dip and spin self-assembly (SA)
method and their structures were investigated by X-ray reflectivity and AFM.
The hydrogen bonding interaction between PVP and CdSe was employed to
assemble multilayer structure. In AFM experiment, the surface roughness of
multilayer thin films by spin SA show smoother surface than that by dip SA.
In the X-ray reflectivity experiment, the multilayer thin films by spin SA
shows more ordered internal structure than that of dip SA but thickness of two
multilayer thin films is almost same. When the temperature of the thin film
increases, the multilayer thin films by spin SA preserve its ordered structure up
to 200° C in in-situ X-ray reflectivity experiment. On further heating, however,
the multilayer thin films to lose ordered structure and finally the fully
collapsed structures are observed around 300°C.
In addition, we demonstrate that the dip and spin SA films having same
internal sequence of multilayers can have remarkably different electrical
characteristics owing to their structural difference. For the diodes, ultrathin
films of poly(phenylene vinylene) (PPV) and poly(styrene sulfonate) (PSS)
were fabricated by spin SA method as hole conductors (p-type). As electron
conductors (n-type), multilayers of poly(4-vinylpyridine) (PVP) and CdSe were self-assembled by the dip or spin SA method. The relative thickness of
respective layers in thin film devices could be easily controlled by the spin
self-assembly. The device of ITO/(PPV/PSS)7/(PAH/PAA)/(PVP/CdSe)5/Al
showed asymmetry in the I-V curve, which is the indicative of a diode
behavior and the turn-on voltage of the diode was controlled by the thickness
variation of the n-type multilayer.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000057088
https://hdl.handle.net/10371/68554
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