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Electronic and chemical properties of cathode structures using 4,7-diphenyl-1,10-phenanthroline doped with rubidium carbonate as electron injection layers

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Authors
Chen, Mei-Hsin; Chen, Yu-Hung; Lin, Chang-Tin; Lee, Guan-Ru; Wu, Chih-I; Leem, Dong-Seok; Kim, Jang-Joo; Pi, Tun-Wen
Issue Date
2009-06-11
Publisher
American Institute of Physics
Citation
J. Appl. Phys. 105, 113714 (2009)
Abstract
The electronic properties and chemical interactions of cathode structures using 4,7-diphenyl-1, 10-phenanthroline (Bphen) doped with rubidium carbonate (Rb2CO3) as electron injection layers were investigated. Current-voltage characteristics reveal that the devices with Bphen/Rb2CO3/Al as cathode structures possess better electron injection efficiency than those with cathode structures of Bphen/LiF/Al. Ultraviolet and x-ray photoemission spectroscopy shows that n-type doping effects resulting from Rb2CO3 and the gap states created by aluminum deposition are both keys to the improved carrier injection efficiency. Moreover, theoretical calculation indicates that the chemical reaction between aluminum and the nitrogen atoms in Bphen is the origin of the gap states.
ISSN
0021-8979
Language
English
URI
http://hdl.handle.net/10371/6940
DOI
https://doi.org/10.1063/1.3143718
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Journal Papers (저널논문_재료공학부)
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